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BRAND

PLACE OF ORIGIN

MODEL

CHARACTERISTIC

Micro Resist

Germany

mr-I 7000Eseries

Tg = 60℃

Excellent film forming quality

Due to high efficiency and fast imprint, the whole process time is shortened.

The embossing temperature is

125 - 150℃,and the imprint pressure is 20-50 bar

 

The impedance performance of Plasma is better than that of PMMA

 

The resolution is better than 50 nm (depending on the template resolution).

mr-I 8000Eseries

Tg = 115℃

Excellent film forming quality
Due to high efficiency and fast imprint, the whole process time is shortened.
The embossing temperature is 170-190 , and the imprint pressure is 20-50 bar
The impedance performance of Plasma is better than that of PMMA
The resolution is better than 50 nm (depending on the template resolution).

mr-I PMMA 35k/75kseries

Tg = 105℃

Excellent film forming quality
Low molecular weight to achieve efficient fluidity
The embossing temperature is 150-180 , and the imprint pressure is 50 bar
The resolution is better than 50 nm (depending on the template resolution).

mr-I T85series

Tg = 85℃
Excellent film forming quality
The embossing temperature is 140-170 centigrade, and the embossing pressure is more than 5 bar
The Plasma etching resistance performance is superior to the traditional Novolak based photoresist.
Non polarized thermoplasticity, excellent UV and optical transmittance, high chemical stability.
The resolution is better than 50 nm (depending on the template resolution).

mr-I 9000Eseries

Tg = 35 before heat curing
Excellent film forming quality
Approach to isothermal processing
N embossing temperature 120 centigrade
N demoulding temperature 100 The temperature is from Tg to Tg, Cured increases and solidifies at the time of imprinting.
Very low residual film thickness to 5 nm
The Plasma etching resistance performance is superior to the traditional Novolak based photoresist.
The resolution is better than 50 nm (depending on the template resolution).

mr-NIL 6000series

Tg = 40 C before photochemical curing
High quality solid photoresist film
Near isothermal processing: embossing, UV exposure curing, stamping and demoulding at the same temperature.
Very low residual film thickness to 10 nm
High fidelity in pattern transfer
The Plasma etching resistance performance is superior to the traditional Novolak based photoresist.
The resolution is better than 50 nm (depending on the template resolution).
Broadband or I line exposure

mr-UVCur06

Spin coating
High quality film forming quality and thickness uniformity
Room temperature processing
The process time is shortened by filling the template holes quickly.
Rapid solidification of low dose UV exposure
The resolution is better than 30 nm (depending on the template resolution).
High impedance performance of Plasma etching
No residual removal of O2 Plasma etching
Broadband or I line exposure