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Electron beam and deep ultraviolet photoresist     Inquiry purchase


BRAND

PLACE OF ORIGIN

MODEL

EXPOSURE

CHARACTERISTIC

Micro Resist

Germany

ma-N2400series

Electron beam and deep ultraviolet exposure

Electron beam and deep UV sensitive; very suitable as a etching mask, excellent resistance to dry and wet engraving; well patterned thermal stability; excellent pattern resolution below -50 nm; under alkaline aqueous solution;

mr-EBL 6000

Electron beam exposure

Electron beam and deep UV sensitive; very suitable as a etching mask, excellent resistance to dry and wet engraving; well patterned thermal stability; excellent pattern resolution below -80 nm; under alkaline aqueous solution.