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2、3、4、6inch GaAs


Undoped GaAs

Semi-Insulating GaAs Specifications

Growth MethodVGF
DopantCarbon
Wafer ShapeRound (DIA: 2", 3", 4", and 6")
Surface Orientation**(100)±0.5°

*5" Wafers available upon request

**Other Orientations maybe available upon request


Resistivity (Ω.cm)≥1 × 107≥1 × 108
Mobility (cm2/V.S)≥ 5,000≥ 4,000
Etch Pitch Density (cm2)1,500-5,0001,500-5,000


Wafer Diameter (mm)50.8±0.376.2±0.3100±0.3150±0.3
Thickness (µm)350±25625±25625±25675±25
TTV [P/P] (µm)≤ 4≤ 4≤ 4≤ 4
TTV [P/E] (µm)≤ 10≤ 10≤ 10≤ 10
WARP (µm)≤ 10≤ 10≤ 10≤ 5
OF (mm)17±122±132.5±1NOTCH
OF / IF (mm)7±112±118±1N/A
Polish*E/E, P/E, P/PE/E, P/E, P/PE/E, P/E, P/PE/E, P/E, P/P

*E=Etched, P=Polished
Note: Other Specifications maybe available upon request


n- and p-type GaAs

Semi-conducting GaAs Specifications

Growth MethodVGF
DopantSi (n-type) AND Zn (p-type)
Wafer ShapeRound (DIA: 2", 3", 4" and 6")
Surface Orientation*(100)±0.5°

*Other Orientations maybe available upon request


DopantSi (n-type)Zn (p-type)
Carrier Concentration (cm-3)(0.8-4) × 1018(0.5-5) × 1019
Mobility (cm2/V.S.)(1-2.5) × 10350-120
Etch Pitch Density (cm2)100-50003,000-5,000


Wafer Diameter (mm)50.8±0.376.2±0.3100±0.3
Thickness (µm)350±25625±25625±25
TTV [P/P] (µm)≤4≤4≤4
TTV [P/E] (µm)≤ 10≤ 10≤ 10
WARP (µm)≤ 10≤ 10≤ 10
OF (mm)17±122±132.5±1
OF / IF (mm)7±112±118±1
Polish*E/E, P/E, P/PE/E, P/E, P/PE/E, P/E, P/P

*E=Etched, P=Polished

Note: Other Specifications maybe available upon request